High performance silicon-based GeSn p-i-n photodetectors for short-wave infrared application

著录项

• 来源
  《中国物理：英文版》 |2019年第12期|410-415|共6页
• 作者

  Yue Zhao; Nan Wang; Kai Yu; Xiaoming Zhang; Xiuli Li; Jun Zheng; Chunlai Xue; Buwen Cheng; Chuanbo Li;

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• 作者单位

  State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China;

  Center of Materials Science and Opto-Electronic Engineering University of Chinese Academy of Sciences Beijing 100049 China;

  School of Science Minzu University of China Beijing 100081 China;

  Optoelectronics Research Center Minzu University of China Beijing 100081 China;

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• 原文格式 PDF
• 正文语种 eng
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