Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study

著录项

• 来源
  《中国物理：英文版》 |2011年第8期|394-397|共4页
• 作者

  Bi Zhi-Wei; Chang Yong-Ming; Li Zhi-Ming; Mei Nan; Hu Zhen-Hua; Mao Wei; Hao Yue; Feng Qian; Cao Yan-Rong; Gao Zhi-Yuan; Zhang Jin-Cheng; Ma Xiao-Hua;

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• 作者单位

  Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 China;

  Life Sciences Research Centre School of Life Sciences and Technology Xidian University Xi'an 710071 China;

  School of Electronical & Machanical Engineering Xidian University Xi'an 710071 China;

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• 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
• 原文格式 PDF
• 正文语种 chi
• 中图分类
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