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>Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor
Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon carbide metal semiconductor field effect transistor
Key Laboratory of Wide Band Gap Semiconductor Materials and Devices of the Ministry of Education School of Microelectronics Xidian University Xi'an 710071 China;