Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3

摘要

A solar-blind photodetector is fabricated on single crystal Ga2O3 based on vertical structure Schottky barrier diode.A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet (UV) transmittance.The quantum efficiency is about 400％ at 42 V.The Ga2O3 photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible (=3213) and solar-blind/UV (=834) rejection ratio.Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature (RT) to 85.8 ℃.The photodetector maintains a high reversibility and response speed,even at high temperatures.