首页> 外文期刊>中国物理:英文版 >Metal halide perovskite photodetectors: Material features and device engineering
【24h】

Metal halide perovskite photodetectors: Material features and device engineering

机译:金属卤化物钙钛矿光电探测器:材料特征和器件工程

获取原文
获取原文并翻译 | 示例
       

摘要

In recent years, the rapid progress of metal halide perovskite solar cells has been witnessed by the rocketing power conversion efficiency. In addition, perovskites have opened up a great opportunity for high performance photodetectors (PDs), due to their attractive optical and electrical properties. This review summarizes the latest progress of perovskite-based PDs, aiming to give a comprehensive understanding of the material design and device engineering in perovskite PDs. To begin with, the performance parameters and device configurations of perovskite PDs are introduced, which are the basis for the next discussion. Next, various PDs based on perovskites in different morphologies are discussed from two aspects:the preparation method, and device performance. Then, several device engineering strategies to enhance the performance of perovskite-based PDs are highlighted, followed by the introduction of flexible and narrow-band perovskite PDs. Finally, key issues and major challenges of perovskite PDs that need to be addressed in the future are outlined.
机译:近年来,金属卤化物钙钛矿太阳能电池的飞速发展已经见证了功率转换效率的飞速增长。此外,钙钛矿因其吸引人的光学和电学特性,为高性能光电探测器(PD)开辟了巨大的机会。这篇综述总结了钙钛矿基PD的最新进展,旨在全面了解钙钛矿PD的材料设计和设备工程。首先,介绍了钙钛矿PD的性能参数和设备配置,它们是接下来讨论的基础。接下来,从制备方法和器件性能两个方面讨论了基于钙钛矿的不同形貌的各种PD。然后,重点介绍了几种增强钙钛矿基PD性能的设备工程策略,然后介绍了柔性和窄带钙钛矿PD。最后,概述了将来需要解决的钙钛矿型PD的关键问题和主要挑战。

著录项

  • 来源
    《中国物理:英文版》 |2019年第1期|148-171|共24页
  • 作者单位

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号