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16-channel dual-tuning wavelength division multiplexer/demultiplexer

机译:16通道双调谐波分复用器/解复用器

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摘要

A 16-channel dual tuning wavelength division multiplexer/demultiplexer based on silicon on insulator platform is demonstrated, which is both peak wavelength tunable and output optical power tunable. The wavelength division mul-tiplexer/demultiplexer consists of an arrayed waveguide grating for wavelength division multiplexing/demultiplexing, a heater for peak wavelength tuning and a variable optical attenuator based on p–i–n carrier-injection structure for optical power tuning. The experimental results show that the insertion loss on chip of the device is 3.7 dB–5.7 dB and the crosstalk is 7.5 dB–9 dB. For the tunability of the peak wavelength, 1.058-nm wavelength tunability is achieved with 271.2-mW power consumption, and the average modulation efficiency is 3.9244 nm/W;for the tunability of the optical power, the op-tical power equalization is achieved in all 16 channels, 20-dB attenuation is achieved with 144.07-mW power consumption, and the raise/fall time of VOA is 35 ns/42 ns.
机译:演示了一种基于硅在绝缘体平台上的16通道双调谐波分复用器/多路分解器,它既可调节峰值波长,又可调节输出光功率。波分复用器/解复用器包括一个用于波分复用/解复用的阵列波导光栅,一个用于峰值波长调谐的加热器和一个基于p–i–n载流子注入结构的可变光衰减器,用于光功率调谐。实验结果表明,该器件在芯片上的插入损耗为3.7 dB–5.7 dB,串扰为7.5 dB–9 dB。对于峰值波长的可调谐性,在271.2-mW的功耗下可实现1.058-nm的波长可调谐性,平均调制效率为3.9244 nm / W;对于光功率的可调谐性,可实现光功率均等化。所有16个通道的功耗为144.07-mW,衰减20 dB,VOA的上升/下降时间为35 ns / 42 ns。

著录项

  • 来源
    《中国物理:英文版》 |2018年第12期|360-366|共7页
  • 作者单位

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

    College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100083, China;

    State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
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