Electronic structures of impurities and point defects in semiconductors

摘要

A brief history of the impurity theories in semiconductors is provided.A bound exciton model is proposed for both donor-and acceptor-like impurities and point defects,which offers a unified understanding for "shallow" and "deep"impurities and point defects.The underlying physics of computational results using different density-functional theorybased approaches are discussed and interpreted in the framework of the bound exciton model.