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Fabrication and characterization of Ge-Ga-Sb-S glass microsphere lasers operating at ~1.9μm

机译:〜1.9μm工作的Ge-Ga-Sb-S玻璃微球激光器的制备与表征

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摘要

We report the fabrication and characterization of germanium gallium antimony sulfide (Ge-Ga-Sb-S or 2S2G,doped with Tm3+ ions) microsphere lasers operating at ~l.9-μm spectral band.Compared to the chalcogenide glasses that are used in previous microsphere lasers,this 2S2G glass has a lower transition temperature and a higher characteristic temperature.This implies that 2S2G microspheres can be fabricated at lower temperatures and the crystallization problem in the sphere-forming process can be alleviated.We show that hundreds of high-quality microspheres (quality factors higher than 105) of various diameters can be produced simultaneously via a droplet sphere-forming method.Microspheres are coupled with silica fiber tapers for optical characterizations.We demonstrate that Whispering Gallery mode (WGM) patterns in the 1.7-2.0 μm band can be conveniently obtained and that once the pump power exceeds a threshold,single-and multi-mode microsphere lasers can be generated.For a typical microsphere whose diameter is 258.64 μm,we demonstrate its laser threshold is 0.383 mW,the laser wavelength is 1907.38 nm,and the thermal sensitivity of the microsphere laser is 29.56 pm/℃.
机译:我们报道了工作在约1.9μm谱带的锗化镓锑锑(Ge-Ga-Sb-S或2S2G,掺有Tm3 +离子)微球激光器的制备和表征。与以前使用的硫族化物玻璃相比微球激光器,这种2S2G玻璃具有较低的转变温度和较高的特征温度。这意味着2S2G微球可以在较低的温度下制造,并且可以缓解球形成过程中的结晶问题。我们证明了数百种高质量的可以通过液滴球形成法同时生产各种直径的微球(质量因子高于105)。微球与二氧化硅纤维锥度结合用于光学表征。我们证明了1.7-2.0μm的耳语画廊模式(WGM)模式可以方便地获得能带,并且一旦泵浦功率超过阈值,就可以生成单模和多模微球激光器。直径为258.64μm的球形,我们证明其激光阈值为0.383 mW,激光波长为1907.38 nm,微球激光的热灵敏度为29.56 pm /℃。

著录项

  • 来源
    《中国物理:英文版》 |2018年第11期|586-590|共5页
  • 作者单位

    Advanced Technology Research Institute, Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211, China;

    Advanced Technology Research Institute, Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211, China;

    Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo 315211, China;

    Advanced Technology Research Institute, Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211, China;

    Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo 315211, China;

    Advanced Technology Research Institute, Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211, China;

    Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Ningbo 315211, China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
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