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Structural and optical properties of Al_(1-x)In_xN epilayers on GaN template grown by metalorganic chemical vapor deposition

         

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  • 来源
    《中国物理:英文版》 |2010年第2期|411-417|共7页
  • 作者单位

    State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,the Chinese Academy of Sciences,P.O. Box 912,Beijing 100083,China;

    State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,the Chinese Academy of Sciences,P.O. Box 912,Beijing 100083,China;

    State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,the Chinese Academy of Sciences,P.O. Box 912,Beijing 100083,China;

    State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,the Chinese Academy of Sciences,P.O. Box 912,Beijing 100083,China;

    State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,the Chinese Academy of Sciences,P.O. Box 912,Beijing 100083,China;

    State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,the Chinese Academy of Sciences,P.O. Box 912,Beijing 100083,China;

    State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,the Chinese Academy of Sciences,P.O. Box 912,Beijing 100083,China;

    State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,the Chinese Academy of Sciences,P.O. Box 912,Beijing 100083,China;

    Suzhou Institute of Nano-tech and Nano-bionics,the Chinese Academy of Sciences,Suzhou 215123,China;

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