首页> 中文期刊> 《中国物理:英文版》 >THEORETICAL DEPENDENCE OF LONG WAVELENGTH PHOTOEMISSION UPON THE SIZE OF Ag NANOPARTICLES EMBEDDED IN BaO SEMICONDUCTOR THIN FILM

THEORETICAL DEPENDENCE OF LONG WAVELENGTH PHOTOEMISSION UPON THE SIZE OF Ag NANOPARTICLES EMBEDDED IN BaO SEMICONDUCTOR THIN FILM

         

摘要

The dependence of long wavelength photoemission upon the size of Ag nanoparticles embedded in a BaO semicon- ductor is predicted and discussed theoretically. The calculated results show that the increase in the diameter of the Ag nanoparticle, in the range from 1.5 to 37.0nm, leads to the emergence of a roughly Gaussian form of the photoemission spectra and the peaks become markedly narrower. The results also show that the increase in the diameter of the Agnanoparticle leads to the decrease of the long wavelength threshold. The incident light wavelength corresponding to the peak value of the photoemission gets bigger with the increase of the size of Ag nanoparticles, thus showing a redshift.

著录项

  • 来源
    《中国物理:英文版》 |2001年第11期|1062-1065|共4页
  • 作者单位

    Department of Physics, Yunnan Normal University, Kunming 650092, China;

    Department of Physics, Yunnan Normal University, Kunming 650092, China;

    Department of Electronics, Peking University, Beijing 100871, China;

    Department of Electronics, Peking University, Beijing 100871, China;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

    photoemission; thin film; semiconductors;

    机译:光发射;薄膜;半导体;
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