STUDY OF THE Al/GRAPHITE INTERFACE

摘要

Thin Al films with a thickness of 20-30nm were prepared by ltra-high vacuum deposition of Al onto a graphite surface arallel to a (0001) basal plane. The samples were annealed up to 1070K. X-ray photoelectron spectroscopy analysis has shown that for temperatures just higher than 770K, a little carbide occurs in the Al film and only an AI-C phase is present at the Al/graphite interface. After nnealing at 970K, the Al4C3 phase can be observed, and the binding energy of the Al2p electrons increases continuously from 72.7 to 74.2eV with increasing temperature up to 1070K. Auger electron spectroscopy depth profiles are measured to investigate the phases existing in the Al film as well as at the Al/graphite interface. It is found that the Al4C3 hase at the interface is the final product of a series of Al carbides from the interfacial reaction between Al and graphite.