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Electron self-energy and effective mass in a single heterostructure

机译:单个异质结构中的电子自能和有效质量

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摘要

In this paper, we investigate the electron self-energy and effective mass in a single heterostructure using Greenfunction method. Numerical calculations of the electron self-energy and effective mass for GaAs/AlAs heterostructure are performed. The results show that the self-energy (effective mass) of electrons, which incorporate the energy of electron coupling to interface-optical phonons and half of the three-dimensional longitudinal optical phonons, increase (decrease) monotonically from that of interface polaron to that of the 3D bulk polaron with increasing the distance between the positions of the electron and interface.
机译:在本文中,我们使用Greenfunction方法研究单个异质结构中的电子自能和有效质量。对GaAs / AlAs异质结构的电子自能和有效质量进行了数值计算。结果表明,电子的自能(有效质量)结合了与界面光子的电子耦合能和三维纵向光子的一半,从界面极化子单调增加(减少)。随电子位置和界面位置之间距离的增加,3D体极化子的数量增加。

著录项

  • 来源
    《中国物理:英文版》 |2003年第11期|1296-1300|共5页
  • 作者

    花修坤; 吴银忠; 李振亚;

  • 作者单位

    Department of Physics, Suzhou University, Suzhou 215006, China;

    Department of Physics, Suzhou University, Suzhou 215006, China;

    Department of Physics, Changshu College, Changshu 215006, China;

    Department of Physics, Suzhou University, Suzhou 215006, China;

    Center of Chinese Advanced Science and Technology (World Laboratory), PO Box 8730, Beijing 100080, China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类
  • 关键词

    semiconductors; electron-phonon interactions;

    机译:半导体;电子-声子相互作用;
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