Influence of structural parameters on the immunity of short-channel effects in grooved-gate nMOSFET

摘要

This paper presents the influences of structural parameters on the immunity of short-channel effects in groovedgate n-channel metal-oxide-semiconductor field effect transistor (nMOSFET) using the simulator PISCES-Ⅱ. The zero or negative groove-junction depth is beneficial to the improvement of the threshold characters, but there exists a limited range. The doping concentration of both substrate and channel has a significant influence on the threshold characters as well as on the device transconductance. Thus, the variation in these adjustable parameters may help to optimize the device design.