Key Laboratory of Optoelectronic Devices and Systems, Ministry of Education, Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China;
School of Materials, Changchun University of Science and Technology, Changchun 130022, China;
School of Precision Instrument and Opto-Electronics Engineering, Tianjin University, Tianjin 300072, China;
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
Key Laboratory of Optoelectronic Devices and Systems, Ministry of Education, Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China;
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
Key Laboratory of Optoelectronic Devices and Systems, Ministry of Education, Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China;
Key Laboratory of Optoelectronic Devices and Systems, Ministry of Education, Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China;
InGaN; rapid-thermal-annealing; multi-quantum well;