机译:使用新的在线PDO方法评估超薄栅氧化物pMOSFET的负偏置温度不稳定性
Department of Microelectronics, Peking University, Beijing 100871, China;
Department of Microelectronics, Peking University, Beijing 100871, China;
Department of Microelectronics, Peking University, Beijing 100871, China;
negative bias temperature instability; proportional differential operator; degradation;