机译:具有应变SiGe / Si量子通道的新型垂直堆叠HCMOSFET
School of Microelectronics, Xidian University, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China;
strained SiGe/Si; quantum well channel; heterostructure CMOSFET; poly-SiGe gate;