机译:STI引起的机械应力对深亚微米CMOS器件泄漏电流的影响
Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050, China;
Graduate School of Chinese Academy of Sciences, Beijing 100049, China;
Grace Semiconductor Manufacturing Corporation, Shanghai 201203, China;
CMOS, shallow trench isolation stress, leakage, gate-induced drain leakage;