机译:四元CuIn1-xGaxSe2薄膜中成分诱导的结构修饰:键合性质与Ga含量的关系
Institute of Photoelectronics,Nankai University,Tianjin 300071,China;
Institute of Photoelectronics,Nankai University,Tianjin 300071,China;
Institute of Photoelectronics,Nankai University,Tianjin 300071,China;
Institute of Photoelectronics,Nankai University,Tianjin 300071,China;
Institute of Photoelectronics,Nankai University,Tianjin 300071,China;
Institute of Photoelectronics,Nankai University,Tianjin 300071,China;
Department of Physics,University of Science and Technology of China,Hefei 230026,China;
chalcopyrite compounds,CuIn1-xGaxSe2 films,anion displacement,Raman scattering;