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Particle-in-Cell/Monte Carlo Collision simulation of planar DC magnetron sputtering*

         

摘要

In this paper a numerical simulation of a planar DC magnetron discharge is performed with the Particle-inCell/Monte Carlo Collision (PIC/MCC) method. The magnetic field used in the simulation is calculated with finite element method according to experimental configuration. The simulation is carried out under the condition of gas pressure of 0.665 Pa and voltage magnitude of 400V. Typical results such as the potential distribution, charged particle densities, the discharge current density and ion flux onto the target are calculated. The erosion profile from the simulation is compared with the experimental data. The maximum erosion position corresponds to the place where the magnetic field lines are parallel to the target surface.

著录项

  • 来源
    《中国物理:英文版》 |2008年第4期|1475-1479|共5页
  • 作者

    Zhao Hua-Yu; Mu Zong-Xin;

  • 作者单位

    State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams,School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China;

    State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams,School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China;

  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 物理学;
  • 关键词

    magnetron sputtering, PIC/MCC, sputtering yield;

    机译:磁控溅射;PIC / MCC;溅射率;
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