Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide

摘要

Nitrogen ions of various doses are implanted into the buried oxide (BOX) of commercial silicon-on-insulator (SOI)materials,and subsequent annealings are carried out at various temperatures.The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high frequency capacitance-voltage (C-V) technique after irradiation using a Co-60 source.It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses.Fhe experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer.Based on the measured C-V data,secondary ion mass spectrometry (SIMS),and Fourier transform infrared (FTIR) spectroscopy,the total dose responses of the nitrogen-implanted SOI wafers are discussed.