机译:AlGaN / GaN高电子迁移率晶体管中的高场感应电子俘获
Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
Nanjing National Laboratory of Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;