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Structure and electronic structure of S-doped graphitic C3N4 investigated by density functional theory

机译:密度泛函理论研究S掺杂石墨C3N4的结构和电子结构

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摘要

The structures of the heptazine-based graphitic C3N4 and the S-doped graphitic C3N4 are investigated by using the density functional theory with a semi-empirical dispersion correction for the weak long-range interaction between layers.The corrugated structure is found to be energetically favorable for both the pure and the S-doped graphitic C3N4.The S doptant is prone to substitute the N atom bonded with only two nearest C atoms.The band structure calculation reveals that this kind of S doping causes a favorable red shift of the light absorption threshold and can improve the electroconductibility and the photocatalytic activity of the graphitic C3N4.
机译:利用密度泛函理论和半经验色散校正技术研究层间弱的长距离相互作用,研究了庚嗪基石墨C3N4和S掺杂石墨C3N4的结构,发现波纹结构在能量上是有利的对于纯C和S掺杂的C3N4石墨,S掺杂剂倾向于取代仅与两个最接近的C原子键合的N原子。能带结构计算表明,这种S掺杂会引起光吸收的有利红移阈值可以提高石墨C3N4的电导率和光催化活性。

著录项

  • 来源
    《中国物理:英文版》 |2012年第10期|380-386|共7页
  • 作者

    Chen Gang; Gao Shang-Peng;

  • 作者单位

    Department of Materials Science, Fudan University, Shanghai 200433, China;

    School of Physical Science and Technology, Yunnan University, Kunming 650091, China;

    Department of Materials Science, Fudan University, Shanghai 200433, China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 chi
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