The effects of substrate temperature on ZnO-based resistive random access memory devices

摘要

Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering.The ZnO thin films are grown at room temperature and 400 °C substrate temperature,respectively.By comparing the data,we find that the latter device displayed better stability in the repetitive switching cycle test,and the resistance ratio between a high resistance state and a low resistance state is correspondingly increased.After 104-s storage time measurement,this device exhibits a good retention property.Moreover,the operation voltages are very low:-0.3 V/-0.7 V (OFF state) and 0.3 V (ON state).A high-voltage forming process in the initial state is not required,and a multistep reset process is demonstrated.