Improving lithographic masks with the assistance of indentations

摘要

Indentations etched on the output surface of a metallic mask are proposed to produce fine lithographic patterns with a resolution of 500 nm using the finite-difference time domain(FDTD)method.Such a designed mask is capable of enhancing near field lithography(NFL)resolution more than three times compared with the structure without indentations.The simnlation results show that the interference disturbance between the adjacent lithographic channels can be eliminated efficiently by employing the indentations.As a straightforward consequence,the channel-to-channel interspaces can be shortened significantly,maintaining a uniform field distribution and high contrast.