School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices, Xidian University, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices, Xidian University, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices, Xidian University, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices, Xidian University, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices, Xidian University, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices, Xidian University, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices, Xidian University, Xi'an 710071, China;
School of Microelectronics, Xidian University, Xi'an 710071, China;
Key Laboratory of Wide Band-Gap Semiconductor MateriaIs and Devices, Xidian University, Xi'an 710071, China;