Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate

著录项

• 来源
  《中国物理：英文版》 |2013年第11期|463-466|共4页
• 作者

  Liu Zhi; Cheng Bu-Wen; Li Ya-Ming; Li Chuan-Bo; Xue Chun-Lai; Wang Qi-Ming;

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• 作者单位

  State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

  State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词