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Effect of InxGa1-xN 'continuously graded' buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition

机译:InxGa1-xN“连续渐变”缓冲层对金属有机化学气相沉积生长的InGaN外延层的影响

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  • 来源
    《中国物理:英文版》 |2013年第10期|401-405|共5页
  • 作者单位

    Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-electronic Materials & Technology,South China Normal University, Guangzhou 510631, China;

    Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-electronic Materials & Technology,South China Normal University, Guangzhou 510631, China;

    Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Key Laboratory for Renewable Energy, Chinese Academy of Sciences, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;

    Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-electronic Materials & Technology,South China Normal University, Guangzhou 510631, China;

    Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-electronic Materials & Technology,South China Normal University, Guangzhou 510631, China;

    Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-electronic Materials & Technology,South China Normal University, Guangzhou 510631, China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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