Gate-to-body tunneling current model for silicon-on-insulator MOSFETs

著录项

• 来源
  《中国物理：英文版》 |2013年第10期|604-607|共4页
• 作者

  Wu Qing-Qing; Chen Jing; Luo Jie-Xin; Lü Kai; Yu Tao; Chai Zhan; Wang Xi;

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• 作者单位

  State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200250, China;

  University of Chinese Academy of Sciences,Beijing 100049, China;

  State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200250, China;

  State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200250, China;

  State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200250, China;

  University of Chinese Academy of Sciences,Beijing 100049, China;

  State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200250, China;

  State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200250, China;

  State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200250, China;

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• 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词