Improved interface properties of an HfO2 gate dielectric GaAs MOS device by using SiNx as an interfacial passivation layer

著录项

• 来源
  《中国物理：英文版》 |2013年第9期|564-567|共4页
• 作者

  Zhu Shu-Yan; Xu Jing-Ping; Wang Li-Sheng; Huang Yuan;

  展开▼
• 作者单位

  School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;

  School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;

  School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;

  Department of Physics Science and Technology, Wuhan University of Technology, Wuhan 430070, China;

  School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;

  展开▼
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词