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Tunable characteristics of bending resonance frequency in magnetoelectric laminated composites

机译:磁电层合复合材料弯曲共振频率的可调谐特性

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摘要

As the magnetoelectric (ME) effect in piezoelectric/magnetostrictive laminated composites is mediated by mechanical deformation,the ME effect is significantly enhanced in the vicinity of resonance frequency.The bending resonance frequency (fr) of bilayered Terfenol-D/PZT (MP) laminated composites is studied,and our analysis predicts that (i) the bending resonance frequency of an MP laminated composite can be tuned by an applied dc magnetic bias (Hdc) due to the △E effect; (ii) the bending resonance frequency of the MP laminated composite can be controlled by incorporating FeCuNbSiB layers with different thicknesses.The experimental results show that with Hdc increasing from 0Oe (1 Oe=79.5775 A/m)to 700 Oe,the bending resonance frequency can be shifted in a range of 32.68 kHz ≤ fr ≤ 33.96 kHz.In addition,with the thickness of the FeCuNbSiB layer increasing from 0 μm to 90 μm,the bending resonance frequency of the MP laminated composite gradually increases from 33.66 kHz to 39.18 kHz.This study offers a method of adjusting the strength of dc magnetic bias or the thicknesses of the FeCuNbSiB layer to tune the bending resonance frequency for ME composite,which plays a guiding role in the ME composite design for real applications.
机译:由于压电/磁致伸缩层压复合材料中的磁电(ME)效应是通过机械变形来介导的,因此在共振频率附近显着增强了ME效应。双层Terfenol-D / PZT(MP)层压的弯曲共振频率(fr)对复合材料进行了研究,我们的分析预测:(i)由于△E效应,可以通过施加直流磁偏置(Hdc)来调节MP层压复合材料的弯曲共振频率; (ii)可以通过掺入不同厚度的FeCuNbSiB层来控制MP层压复合材料的弯曲共振频率。实验结果表明,随着Hdc从0Oe(1 Oe = 79.5775 A / m)增加到700 Oe,弯曲共振频率可以在32.68 kHz≤fr≤33.96 kHz的范围内移动。此外,随着FeCuNbSiB层的厚度从0μm增加到90μm,MP层压复合材料的弯曲共振频率逐渐从33.66 kHz增加到39.18 kHz这项研究提供了一种调节直流磁偏置强度或FeCuNbSiB层厚度以调节ME复合材料弯曲共振频率的方法,该方法在实际应用中的ME复合材料设计中起着指导作用。

著录项

  • 来源
    《中国物理:英文版》 |2013年第7期|511-515|共5页
  • 作者单位

    Research Center of Sensors and Instruments,College of Optoelectronic Engineering,Chongqing University,Chongqing 400044,China;

    Research Center of Sensors and Instruments,College of Optoelectronic Engineering,Chongqing University,Chongqing 400044,China;

    Research Center of Sensors and Instruments,College of Optoelectronic Engineering,Chongqing University,Chongqing 400044,China;

    Research Center of Sensors and Instruments,College of Optoelectronic Engineering,Chongqing University,Chongqing 400044,China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
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