机译:掺杂Si的In0.49Ga0.51P势垒层对在半绝缘GaAs衬底上生长的In0.4Ga0.6As MOSFET器件性能的影响
Microwave Device and IC Department,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;
Microwave Device and IC Department,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;
Microwave Device and IC Department,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;
Microwave Device and IC Department,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;
Microwave Device and IC Department,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;
Microwave Device and IC Department,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;
Microwave Device and IC Department,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;