Directly extracting both threshold voltage and series resistance from the conductance-voltage curve of an AlGaN/GaN Schottky diode

摘要

An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared.By using the peak-conductance model,the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance-voltage (G-V) curve and found to be in good agreement with the ones obtained by using the capacitancevoltage (C-V) curve integration and the plot of d V/d (ln I) versus current I.Thus,a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance-voltage curve for the AlGaN/GaN Schottky diode is developed.