In this paper,the electrical parameters of Au-Si (MS) and Au/Si3N4-Si (MIS) Schottky diodes are obtained from the forward bias current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature.Experimental results show that the rectifying ratios of the MS and MIS diodes at ± 5 V are found to be 1.25 × 103 and 1.27 × 104,respectively.The main electrical parameters of the MS and MIS diodes,such as the zero-bias barrier height (ΦBo) and ideality factor (n),are calculated to be 0.51 eV (I-V),0.53 eV (C-V),and 4.43,and 0.65 eV (I-V),0.70 eV (C-V),and 3.44,respectively.In addition,the energy density distribution profile of the interface states (Nss) is obtained from the forward bias I-V,and the series resistance (Rs) values for the two diodes are calculated from Cheung's method and Ohm's law.
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