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Temperature-controllable spin-polarized current and spin polarization in a Rashba three-terminal double-quantum-dot device

机译:Rashba三端子双量子点器件中的温度可控自旋极化电流和自旋极化

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摘要

We propose a Rashba three-terminal double-quantum-dot device to generate a spin-polarized current and manipulate the electron spin in each quantum dot by utilizing the temperature gradient instead of the electric bias voltage.This device possesses a nonresonant tunneling channel and two resonant tunneling channels.The Keldysh nonequilibrium Green's function techniques are employed to determinate the spin-polarized current flowing from the electrodes and the spin accumulation in each quantum dot.We find that their signs and magnitudes are well controllable by the gate voltage or the temperature gradient.This result is attributed to the change in the slope of the transmission probability at the Fermi levels in the low-temperature region.Importantly,an obviously pure spin current can be injected into or extracted from one of the three electrodes by properly choosing the temperature gradient and the gate voltages.Therefore,the device can be used as an ideal thermal generator to produce a pure spin current and manipulate the electron spin in the quantum dot.
机译:我们提出了一种Rashba三端双量子点器件,该器件可产生自旋极化电流,并利用温度梯度而不是电偏置电压来控制每个量子点中的电子自旋,该器件具有非谐振隧穿通道和两个我们利用Keldysh非平衡格林函数技术来确定从电极流出的自旋极化电流和每个量子点中的自旋积累,我们发现它们的符号和大小可以通过栅极电压或温度梯度很好地控制。 。这结果被归因于传输概率的在低温费米能级region.Importantly,一个明显纯自旋电流可以通过适当地选择温度被注射到或来自三个电极中的一个提取的斜率变化因此,该器件可以用作理想的热发生器来产生p确保自旋电流并控制量子点中的电子自旋。

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  • 来源
    《中国物理:英文版》 |2013年第5期|492-501|共10页
  • 作者单位

    Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500, China;

    Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500, China;

    Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500, China;

    Laboratory of Advanced Functional Materials and College of Physics and Engineering, Changshu Institute of Technology, Changshu 215500, China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
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