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Electronic Raman scattering in double semi-parabolic quantum wells

机译:双半抛物量子阱中的电子拉曼散射

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摘要

The differential cross-section for electronic Raman scattering in double semi-parabolic quantum wells of typical GaAs/AlxGa1-xAs is investigated numerically with the effective-mass approximation.The dependence of the differential cross-section on structural parameters such as the barrier width and the well widths is studied.Our results indicate that the electronic Raman scattering is affected by the geometrical size and can be negligible in the symmetric double-well case.
机译:通过有效质量近似数值研究了典型GaAs / AlxGa1-xAs双半抛物量子阱中电子拉曼散射的微分截面。该微分截面对结构参数如势垒宽度和势垒宽度的依赖性。我们的结果表明,电子拉曼散射受几何尺寸的影响,在对称双阱情况下可以忽略不计。

著录项

  • 来源
    《中国物理:英文版》 |2013年第5期|523-526|共4页
  • 作者单位

    Department of Physics, College of Sciences, Shiraz University of Technology, P.O.Box 313-71555, Shiraz, Iran;

    Department of Physics, College of Sciences, Shiraz University of Technology, P.O.Box 313-71555, Shiraz, Iran;

    Department of Physics, College of Sciences, Shiraz University of Technology, P.O.Box 313-71555, Shiraz, Iran;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
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