机译:InGaAsBi / GaAs应变量子阱的光学特性通过温度依赖性光致发光研究
state Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences, Shanghai 200050, China;
Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg SE-41296, Sweden;