The fabrication and characterization of 4H-SiC power UMOSFETs

摘要

The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) is reported in this paper.The device has a 15-μm thick drift layer with 3 × 1015 cm-3 N-type doping concentration and a 3.1-μm channel length.The measured on-state source-drain current density is 65.4 A/cm2 at Vg =40 V and VDS =15 V.The measured threshold voltage (Vth) is 5.5 V by linear extrapolation from the transfer characteristics.A specific on-resistance (Rsp-on) is 181 mΩ·cm2 at Vg =40 V and a blocking voltage (BV) is 880 V (IDs =100 μA@880V) at Vg =0 V.