0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-ybuffers

摘要

Single-junction,lattice-mismatched In0.69Ga0.31 As thermophotovoltaic (TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition (MOCVD).Compositionally undulating stepgraded InAsyPl-y buffer layers with a lattice mismatch of ～ 1.2％ are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate.With an optimized buffer thickness,the In0.69Ga0.31 As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion.High-performance single-junction devices are demonstrated,with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9％ at a short-circuit current density of 47.6 mA/cm2,which are measured under the standard solar simulator of air mass 1.5-global (AM 1.5 G).