A simple and accurate method for measuring program/erase speed in a memory capacitor structure

摘要

With the merits of a simple process and a short fabrication period,the capacitor structure provides a convenient way to evaluate memory characteristics of charge trap memory devices.However,the slow minority carrier generation in a capacitor often makes an underestimation of the program/erase speed.In this paper,illumination around a memory capacitor is proposed to enhance the generation of minority carriers so that an accurate measurement of the program/erase speed can be achieved.From the dependence of the inversion capacitance on frequency,a time constant is extracted to quantitatively characterize the formation of the inversion layer.Experimental results show that under a high enough illumination,this time constant is greatly reduced and the measured minority carrier-related program/erase speed is in agreement with the reported value in a transistor structure.