机译:具有p-InAlGaN空穴注入层的GaN基发光二极管的性能改进
Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510631, China;
Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510631, China;
Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510631, China;
Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510631, China;
Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510631, China;
Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510631, China;
Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China;
Laboratory of Nanophotonic Functional Materials and Devices, South China Normal University, Guangzhou 510631, China;