The Pt/Si/Ta/Ti multilayer metal contacts on 4H–SiC are annealed in Ar atmosphere at 600 ◦C–1100 ◦C by a rapid thermal processor (RTP). The long-term thermal stability is evaluated by aging the annealed contact at 600 ◦C in air. The contact’s properties are determined by current–voltage measurement, and the specific contact resistance is calculated based on the transmission line model (TLM). Transmission electron microscope (TEM) and energy-dispersive x-ray spectrometry (EDX) are used to characterize the interface morphology, thickness, and composition. The results reveal that a higher annealing temperature is favorable for the formation of an Ohmic contact with a lower specific contact resistance, and causes the rapid degradation of the Ohmic contact in the aging process.
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机译:快速热处理器(RTP)在Ar气氛中于600 ºC–1100ºC下对4H–SiC上的Pt / Si / Ta / Ti多层金属触点进行退火。通过在600℃的空气中老化退火触点,可以评估长期的热稳定性。触点的特性由电流-电压测量确定,并且特定的接触电阻根据传输线模型(TLM)计算。透射电子显微镜(TEM)和能量色散X射线光谱仪(EDX)用于表征界面形态,厚度和组成。结果表明,较高的退火温度有利于形成具有较低比接触电阻的欧姆接触,并导致在老化过程中欧姆接触迅速降解。
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