Electronic structure of O-doped SiGe calculated by DFT + U method

著录项

• 来源
  《中国物理：英文版》 |2016年第12期|377-389|共13页
• 作者

  Zong-Yan Zhao; Wen Yang; Pei-Zhi Yang;

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• 作者单位

  Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China;

  Yunnan Key Laboratory of Micro/Nano Materials & Technology, School of Materials Science and Engineering,Yunnan University, Kunming 650504, China;

  Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials(Ministry of Education),Yunnan Normal University, Kunming 650092, China;

  Key Laboratory of Advanced Technique & Preparation for Renewable Energy Materials(Ministry of Education),Yunnan Normal University, Kunming 650092, China;

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• 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词