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A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

机译:同时提高SOI SiGe HBT的截止频率击穿电压和热稳定性的乘积的技术

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  • 来源
    《中国物理:英文版》 |2016年第12期|308-313|共6页
  • 作者单位

    College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China;

    College of Physics, Liaoning University, Shenyang 110036, China;

    College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China;

    College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China;

    College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China;

    College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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