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Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

机译:具有氧空位和金属Ag丝的Ag / ZnO / Pt电阻开关存储器中单极和双极模式的共存

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  • 来源
    《中国物理:英文版》 |2016年第12期|418-423|共6页
  • 作者单位

    Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet(UV)Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China;

    Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet(UV)Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China;

    Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet(UV)Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China;

    Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet(UV)Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China;

    Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet(UV)Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China;

    Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet(UV)Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China;

    Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet(UV)Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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