Effect of cryogenic temperature characteristics on 0.18-µm silicon-on-insulator devices

摘要

The experimental results of the cryogenic temperature characteristics on 0.18-µm silicon-on-insulator (SOI) metal-oxide-silicon (MOS) field-effect-transistors (FETs) were presented in detail. The current and capacitance characteristics for different operating conditions ranging from 300 K to 10 K were discussed. SOI MOSFETs at cryogenic temperature exhibit improved performance, as expected. Nevertheless, operation at cryogenic temperature also demonstrates abnormal behaviors, such as the impurity freeze-out and series resistance effects. In this paper, the critical parameters of the devices were extracted with a specific method from 300 K to 10 K. Accordingly, some temperature-dependent-parameter models were created to improve fitting precision at cryogenic temperature.