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Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model

         

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  • 来源
    《中国物理:英文版》 |2016年第4期|444-449|共6页
  • 作者单位

    College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;

    Tsinghua National Laboratory for Information and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China;

    Tsinghua National Laboratory for Information and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China;

    Tsinghua National Laboratory for Information and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China;

    Tsinghua National Laboratory for Information and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China;

    Tsinghua National Laboratory for Information and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China;

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  • 正文语种 eng
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