Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs

著录项

• 来源
  《中国物理：英文版》 |2016年第4期|314-319|共6页
• 作者

  Qing-Wen Song; Xiao-Yan Tang; Hao Yuan; Yue-Hu Wang; Yi-Meng Zhang; Hui Guo; Ren-Xu Jia;

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• 作者单位

  School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

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• 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

• 入库时间 2024-01-06 16:33:48