Fabrication and characterization of the normally-off N-channel lateral 4H-SiC metal-oxide-semiconductor field-effect transistors

著录项

• 来源
  《中国物理：英文版》 |2016年第3期|362-365|共4页
• 作者

  Qing-Wen Song; Xiao-Yan Tang; Yan-Jing He; Guan-Nan Tang; Yue-Hu Wang; Yi-Meng Zhang; Hui Guo;

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• 作者单位

  School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

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• 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
• 原文格式 PDF
• 正文语种 eng
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