Improvement in electrical properties of high-κ film on Ge substrate by an improved stress relieved pre-oxide method

著录项

• 来源
  《中国物理：英文版》 |2016年第2期|468-471|共4页
• 作者

  Ji-Bin Fan; Xiao-Fu Ding; Hong-Xia Liu; Peng-Fei Xie; Yuan-Tao Zhang; Qing-Liang Liao;

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• 作者单位

  School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;

  School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

  School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;

  School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China;

  School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;

  School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;

  School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;

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• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词