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Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co2MnSi/graphene-Ge junction

机译:石墨烯隧道势垒对Heusler合金Co2MnSi /石墨烯/ n-Ge结的肖特基势垒高度的影响

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  • 来源
    《中国物理:英文版》 |2016年第2期|426-429|共4页
  • 作者单位

    School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, China;

    School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, China;

    School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, China;

    School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, China;

    School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, China;

    School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, China;

    School of Electronics and Information, Northwestern Polytechnical University, Xi'an 710072, China;

  • 收录信息 中国科学引文数据库(CSCD);中国科技论文与引文数据库(CSTPCD);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2024-01-30 16:37:17
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